2SK4019(Q)

更新时间： 2024-09-15 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动
页数	文件大小	规格书
6页	772K
描述
Trans MOSFET N-CH 100V 5A 3-Pin(3+Tab) PW-Mold2

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2SK4019(Q) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.7	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK4019(Q) 数据手册

2SK4019

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOS V)

2SK4019

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

Unit: mm

０．２

６．５±

５．２±

．

０．６ MAX

z 4 V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.17 Ω (typ.)

DS (ON)

０．２

１．１±

: |Y | = 4.5 S (typ.)

９

０．

z Low leakage current : I

= 100 μA (max) (V

= 100 V)

MAX

０．６

DSS

z Enhancement mode : V = 0.8~2.0 V (V

= 10 V, I = 1 mA)

３

２．

Absolute Maximum Ratings (Ta = 25°C)

１

２

３

０．１５

０．６±

．

０．８ MAX

Characteristic

Drain−source voltage

Symbol

Rating

Unit

．

１．1 MAX

０．１５

０．６±

100

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

TOSHIBA

Weight: 0.36 g (typ.)

⎯

DC (Note 1)

Drain current

Pulse (Note 1)

⎯

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

2-7J2B

180

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

6.25

125

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 25 V, T = 25°C (initial), L = 11.6 mH, R = 25 Ω, I = 5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-20

12 3 4 5 6

中文翻译

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2SK4021(Q)	TOSHIBA	获取价格	MOSFET N-CH 250V 4.5A PW-MOLD2
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2SK4023	TOSHIBA	获取价格	Switching Regulator, DC/DC Converter
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