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2SK4023_09

更新时间： 2024-09-15 07:32:39
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关
页数 文件大小 规格书
6页 182K
描述
Switching Regulator, DC/DC Converter

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中文翻译

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2SK4023_09 数据手册

 浏览型号2SK4023_09的Datasheet PDF文件第2页浏览型号2SK4023_09的Datasheet PDF文件第3页浏览型号2SK4023_09的Datasheet PDF文件第4页浏览型号2SK4023_09的Datasheet PDF文件第5页浏览型号2SK4023_09的Datasheet PDF文件第6页 
2SK4023  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)  
2SK4023  
Switching Regulator, DC/DC Converter  
Unit: mm  
6.5 ± 0.2  
5.2 ± 0.2  
•
•
•
•
•
4 V gate drive  
0.6 MAX.  
Low drain-source ON-resistance: R  
= 4.0 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 0.8 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 450 V)  
DSS  
DS  
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1 ± 0.2  
0.9  
0.6 MAX.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
2.3 2.3  
V
450  
450  
±30  
1
V
V
V
DSS  
1
2
3
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
0.8 MAX.  
0.6 ± 0.15  
0.6 ± 0.15  
1.1 MAX.  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
2
DP  
2
(Note 1)  
1. GATE  
2. DRAIN  
（HEAT SINK）  
1
Drain power dissipation (Tc = 25°C)  
P
20  
W
D
AS  
AR  
3. SOURSE  
3
Single-pulse avalanche energy  
E
122  
mJ  
(Note 2)  
Avalanche current  
I
1
2
A
JEDEC  
⎯
⎯
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
JEITA  
T
ch  
150  
TOSHIBA  
2-7J2B  
Storage temperature range  
T
stg  
−55 to 150  
Weight: 0.36 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C, L = 203 mH, I = 1 A, R = 25Ω  
V
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-07-11  
123456

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