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2SK4021

更新时间： 2024-09-15 03:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动
页数 文件大小 规格书
6页 271K
描述
Switching Regulator and DC/DC Converter Applications Motor Drive Applications

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中文翻译

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2SK4021 数据手册

 浏览型号2SK4021的Datasheet PDF文件第2页浏览型号2SK4021的Datasheet PDF文件第3页浏览型号2SK4021的Datasheet PDF文件第4页浏览型号2SK4021的Datasheet PDF文件第5页浏览型号2SK4021的Datasheet PDF文件第6页 
2SK4021  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)  
2SK4021  
Switching Regulator and DC/DC Converter Applications  
Unit: mm  
Motor Drive Applications  
０．２  
０．２  
６．５±  
５．２±  
．
０．６ MAX  
z Low drain-source ON-resistance  
z High forward transfer admittance  
: R  
= 0.8 Ω (typ.)  
DS (ON)  
: |Y | = 4.5 S (typ.)  
fs  
０．２  
１．１±  
９
０．  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 250 V)  
DSS  
DS  
MAX  
０．６  
: V = 1.5~3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
３
３
２．  
２．  
Absolute Maximum Ratings (Ta = 25°C)  
１
２
３
０．１５  
Characteristic  
Drain−source voltage  
Symbol  
Rating  
Unit  
０．６±  
．
０．８ MAX  
．
１．1 MAX  
０．１５  
０．６±  
V
250  
250  
±20  
4.5  
18  
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
JEDEC  
JEITA  
⎯
Drain current  
I
A
DP  
⎯
Drain power dissipation (Tc = 25°C)  
P
20  
W
D
AS  
AR  
TOSHIBA  
2-7J2B  
Single-pulse avalanche energy  
E
51  
mJ  
(Note 2)  
Weight: 0.36 g (typ.)  
Avalanche current  
I
4.5  
2.0  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
6.25  
125  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω, I  
V
DD  
= 4.5 A  
AR  
ch  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2007-07-24  
123456

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