Datasheet > 2SK4021(Q)

2SK4021(Q)

更新时间： 2024-09-15 21:15:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	237K
描述
MOSFET N-CH 250V 4.5A PW-MOLD2

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2SK4021(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

2SK4021(Q) 数据手册

2SK4021

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)

2SK4021

Switching Regulators and DC-DC Converter Applications

Unit: mm

Motor Drive Applications

6.5 ± 0.2

5.2 ± 0.2

0.6 MAX.

z Low drain-source ON-resistance: R

= 0.8 Ω (typ.)

DS (ON)

z High forward transfer admittance: |Y | = 4.5 S (typ.)

z Low leakage current: I

= 100 μA (max) (V

= 250 V)

DSS

z Enhancement mode: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

1.1 ± 0.2

0.9

0.6 MAX.

Absolute Maximum Ratings (Ta = 25°C)

2.3 2.3

Characteristic

Drain−source voltage

Symbol

Rating

Unit

250

±20

4.5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

0.8 MAX.

0.6 ± 0.15

GSS

1.1 MAX.

DC (Note 1)

Pulse (Note 1)

Drain current

1. GATE

2. DRAIN

（HEAT SINK）

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

3. SOURSE

(Note 2)

Avalanche current

4.5

2.0

JEDEC

⎯

Repetitive avalanche energy (Note 3)

Channel temperature

°C

JEITA

150

TOSHIBA

2-7J2B

Storage temperature range

−55 to 150

stg

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω, I

= 4.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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