2SK4016(Q)

更新时间： 2024-09-14 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	212K
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中文翻译

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数据手册

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2SK4016(Q) 数据手册

2SK4016

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)

2SK4016

Switching Regulator Applications

Unit: mm

•

Low drain-source ON-resistance: R

High forward transfer admittance: |Y | = 10 S (typ.)

= 0.33 Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 600 V)

DSS

Enhancement model: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

600

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

1033

(Note 2)

Avalanche current

5.0

JEDEC

JEITA

―

Repetitive avalanche energy (Note 3)

Channel temperature

°C

SC-67

2-10U1B

Weight : 1.7 g (typ.)

150

TOSHIBA

Storage temperature range

−55~150

stg

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.5

°C/W

th (ch-c)

62.5

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 10.7 mH, I = 13 A, R = 25 Ω

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2005-05-30

12 3 4 5 6

中文翻译

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