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2SK3788-01 PDF预览

2SK3788-01

更新时间： 2024-11-24 22:22:19
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
4页 100K
描述
N-CHANNEL SILICON POWER MOSFET

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2SK3788-01 数据手册

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2SK3788-01  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
200406  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
High speed switching, Low on-resistance  
Low driving power, Avalanche-proof  
No secondary breadown  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristic  
Absolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Equivalent circuit schematic  
Item  
Symbol  
Ratings  
150  
Unit  
V
Remarks  
Drain(D)  
Drain-source voltage  
VDS  
V
VDSX  
ID  
150  
VGS=-30V  
A
Continuous Drain Current  
Pulsed Drain Current  
92  
A
ID(puls]  
VGS  
IAR  
±368  
±30  
Gate(G)  
V
Gate-Source Voltage  
Maximum Avalanche current  
Non-Repetitive  
A
92  
Note *1  
Note *2  
Source(S)  
mJ  
EAS  
1205.7  
<
Note *1:Tch 150°C,Repetitive and Non-repetitive  
=
Maximum Avalanche Energy  
Repetitive  
Note *2:StartingTch=25°C,IAS=37A,L=1.29mH,  
mJ  
EAR  
41  
Note *3  
VCC=48V,RG=50Ω  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. Power Dissipation  
EAS limited by maximum channel temperature  
and avalanch current.  
kV/µs  
dVDS/dt  
dV/dt  
PD  
20  
5
<
VDS 150V  
=
kV/µs Note *4  
See to the ‘Avalanche Energy’ graph  
Note *3:Repetitive rating:Pulse width limited by  
maximum channel temperature.  
See to the ‘Transient Theemal impedance’  
graph  
410  
2.50  
+150  
Tc=25°C  
Ta=25°C  
W
Operating and Storage  
Temperature range  
Tch  
°C  
°C  
Tstg  
-55 to +150  
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C  
Electrical characteristics (Tc =25°C unless otherwise specified)  
=
=
=
Min.  
Typ.  
Max. Units  
Symbol  
BVDSS  
VGS(th)  
Item  
Test Conditions  
µ
V
Drain-Source Breakdown Voltaget  
Gate Threshold Voltage  
150  
ID= 250 A  
VGS=0V  
VDS=VGS  
µ
V
3.0  
5.0  
25  
ID= 250 A  
µA  
VDS=150V VGS=0V  
Tch=25°C  
Zero Gate Voltage Drain Current  
IDSS  
250  
100  
26  
Tch=125°C  
VDS=120V VGS=0V  
VGS=±30V  
VDS=0V  
ID=46A VGS=10V  
IGSS  
RDS(on)  
gfs  
nA  
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transcondutance  
Input Capacitance  
21  
24  
mΩ  
S
12  
ID=46A VDS=25V  
Ciss  
Coss  
Crss  
td(on)  
tr  
3800  
530  
35  
5400  
795  
pF  
VDS=75V  
Output Capacitance  
VGS=0V  
52.5  
Reverse Transfer Capacitance  
Turn-On Time ton  
f=1MHz  
ns  
40  
60  
168  
84  
VCC=48V ID=46A  
VGS=10V  
112  
56  
td(off)  
tf  
Turn-Off Time toff  
RGS=10 Ω  
30  
45  
80  
120  
45  
QG  
nC  
Total Gate Charge  
VCC=75V  
ID=92A  
30  
QGS  
QGD  
VSD  
Gate-Source Charge  
Gate-Drain Charge  
25  
38  
VGS=10V  
1.20  
250  
2.0  
1.50  
V
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=92A VGS=0V Tch=25°C  
IF=92A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
trr  
Qrr  
ns  
µC  
Thermalcharacteristics  
Item  
Symbol  
Rth(ch-c)  
Rth(ch-a)  
Test Conditions  
channel to case  
channel to ambient  
Min.  
Typ.  
Max. Units  
0.305 °C/W  
Thermal resistance  
°C/W  
50.0  
www.fujielectric.co.jp/fdt/scd  
1
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