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2SK3796-3 PDF预览

2SK3796-3

更新时间： 2024-10-14 20:06:51
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
4页 52K
描述
TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,1.2MA I(DSS),SOT-416

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中文翻译

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2SK3796-3 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.59FET 技术：JUNCTION
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.1 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

2SK3796-3 数据手册

 浏览型号2SK3796-3的Datasheet PDF文件第2页浏览型号2SK3796-3的Datasheet PDF文件第3页浏览型号2SK3796-3的Datasheet PDF文件第4页 
Ordering number : EN8636  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Junction Silicon FET  
Low-Frequency General-Purpose Amplifier,  
Impedance Converter Applications  
2SK3796  
Applicatins  
• Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.  
Features  
• Small I  
.
GSS  
•
Small Ciss  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
--30  
10  
DSX  
Gate-to-Drain Voltage  
Gate Current  
V
V
GDS  
I
G
mA  
mA  
mW  
°C  
Drain Current  
I
10  
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
D
Tj  
Tstg  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--10µA, V =0V  
Unit  
min  
--30  
max  
Gate-to-Drain Breakdown Voltage  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
nA  
V
(BR)GDS  
G
DS  
I
V
=--20V, V =0V  
DS  
--1.0  
--2.2  
GSS  
(off)  
GS  
DS  
V
V
=10V, I =1µA  
--0.18  
--0.95  
GS  
D
Marking : K  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
32207GB TI IM TC-00000609 No.8636-1/4  
1234

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