Datasheet > 2SK3799(Q,M)

2SK3799(Q,M)

更新时间： 2024-11-25 19:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	185K
描述
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220NIS

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2SK3799(Q,M) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	2.1	Base Number Matches：	1

2SK3799(Q,M) 数据手册

2SK3799

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)

2SK3799

Switching Regulator Applications

Unit: mm

z Low drain-source ON-resistance: R

= 1.0 Ω (typ.)

DS (ON)

z High forward transfer admittance: |Y | = 6.0 S (typ.)

z Low leakage current: I

= 100 μA (max) (V

= 720 V)

DSS

z Enhancement model: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1. Gate

Drain current

2. Drain

3. Source

Pulse

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

—

1080

(Note 2)

SC-67

2-10U1B

Weight: 1.7 g (typ.)

Avalanche current

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

2.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

62.5

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 30.9 mH, R = 25 Ω, I = 8 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2010-01-29

12 3 4 5 6

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