生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.83 |
配置: | SINGLE | FET 技术: | JUNCTION |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK381-11-B | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK381-11-C | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK381-11-E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK3811-ZP | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3811-ZP-E2-AY | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,110A I(D),TO-263AB | |
2SK3812 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3812-ZP | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3812-ZP | RENESAS |
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Nch Single Power Mosfet 60V 110A 2.8Mohm Mp-25Zp/To-263 | |
2SK3813 | TYSEMI |
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Low On-state resistance RDS(on)1 = 5.3 m MAX. Low C iss: C iss = 5500 pF TYP. | |
2SK3813 | RENESAS |
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60mA, 40V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, MP-3, 3 PIN |