生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.38 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 23 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3815_07 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SK3815-TL | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Met | |
2SK3816 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3816(SMP) | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),TO-262VAR | |
2SK3816(SMP-FD) | ONSEMI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
2SK3816-DL-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 60V, 40A, 26mΩ, Single TO-262-3L/TO-263-2L, D2PAK / TO-2 | |
2SK3817 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3817-DL-E | ONSEMI |
获取价格 |
Power MOSFET 60V 60A, 22mOhm Single N-Channel D2PAK | |
2SK3817-TL | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
2SK3818 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device |