2SK3814

更新时间： 2024-11-17 22:52:59

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	142K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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2SK3814 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3814

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3814 is N-channel MOS Field Effect Transistor

PART NUMBER

2SK3814

PACKAGE

designed for high current switching applications.

TO-251 (MP-3)

TO-252 (MP-3Z)

2SK3814-Z

FEATURES

• Super low on-state resistance

R^DS(on)1= 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)

R^DS(on)2= 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

• Low Ciss: Ciss = 5450 pF TYP.

(TO-251)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

±20

(TO-252)

±60

±240

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

PT2

1.0

T^ch

150

Storage Temperature

T^stg

−55 to +150

102

Single Avalanche Energy ^Note2

Repetitive Avalanche Current ^Note3

Repetitive Avalanche Energy ^Note3

E^AS

I^AR

E^AR

102

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH

3. T^ch(peak)≤ 150°C, RG = 25 Ω

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16740EJ1V0DS00 (1st edition)

Date Published September 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7 8

中文翻译

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与2SK3814相关器件

型号	品牌	获取价格	描述	数据表
2SK3814-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3815	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3815(SMP)	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,23A I(D),TO-262VAR
2SK3815(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,23A I(D),TO-263ABVAR
2SK3815_07	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK3815-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Met
2SK3816	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3816(SMP)	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),TO-262VAR
2SK3816(SMP-FD)	ONSEMI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3816-DL-1E	ONSEMI	获取价格	N-Channel Power MOSFET, 60V, 40A, 26mΩ, Single TO-262-3L/TO-263-2L, D2PAK / TO-2