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2SK3818

更新时间： 2024-11-06 04:26:31
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲通用开关
页数 文件大小 规格书
4页 44K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

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中文翻译

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2SK3818 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.34雪崩能效等级（Eas）：410 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：74 A最大漏源导通电阻：0.018 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：296 A
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK3818 数据手册

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Ordering number : ENN8056  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3818  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Motor drive, DC / DC converter.  
•
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
74  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
296  
1.65  
75  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Enargy (Single Pulse) *1  
Avalanche Current *2  
E
410  
74  
AS  
I
AV  
Note : *1 V =20V, L=100µH, I =74A  
DD  
AV  
*2 L≤100µH, single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
60  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0  
GS  
1
µA  
µA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
27  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =37A  
45  
S
D
R
(on)1  
I
I
=37A, V =10V  
GS  
10  
13  
13  
18  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=37A, V =4V  
D GS  
Marking : K3818  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D2404QA TS IM TB-00000613 No.8056-1/4  
1234

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2SK381-T11-A MITSUBISHI

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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-B MITSUBISHI

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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-D MITSUBISHI

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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-E MITSUBISHI

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 		Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK382 ETC

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