5秒后页面跳转
2SK3817-DL-E PDF预览

2SK3817-DL-E

更新时间: 2024-11-06 14:32:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 258K
描述
Power MOSFET 60V 60A, 22mOhm Single N-Channel D2PAK

2SK3817-DL-E 技术参数

是否Rohs认证: 符合生命周期:End Of Life
Reach Compliance Code:not_compliant风险等级:5.76
Base Number Matches:1

2SK3817-DL-E 数据手册

 浏览型号2SK3817-DL-E的Datasheet PDF文件第2页浏览型号2SK3817-DL-E的Datasheet PDF文件第3页浏览型号2SK3817-DL-E的Datasheet PDF文件第4页 
Ordering number : ENN8055  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3817  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
4V drive.  
Motor drive, DC / DC converter.  
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
60  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
240  
1.65  
65  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Enargy (Single Pulse) *1  
Avalanche Current *2  
E
135  
60  
AS  
I
AV  
Note : *1 V =20V, L=50µH, I =60A  
DD  
AV  
*2 L50µH, single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
60  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0  
GS  
1
µA  
µA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
24  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =30A  
40  
S
D
R
(on)1  
I
I
=30A, V =10V  
GS  
11.5  
16  
15  
22  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=30A, V =4V  
D GS  
Marking : K3817  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
http://semicon.sanyo.com/en/network  
D2404QA TS IM TB-00000611 No.8055-1/4  

与2SK3817-DL-E相关器件

型号 品牌 获取价格 描述 数据表
2SK3817-TL ONSEMI

获取价格

Power Field-Effect Transistor, 60A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
2SK3818 SANYO

获取价格

N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3818(SMP) ONSEMI

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,74A I(D),TO-262VAR
2SK3818(SMP-FD) ONSEMI

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,74A I(D),TO-263ABVAR
2SK3819 SANYO

获取价格

General-Purpose Switching Device Applications
2SK3819(SMP-FD) ONSEMI

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,14A I(D),TO-263ABVAR
2SK3819-TL ONSEMI

获取价格

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
2SK381-T11-A MITSUBISHI

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-B MITSUBISHI

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-D MITSUBISHI

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC