Datasheet > 2SK3819-TL

2SK3819-TL

更新时间： 2024-11-07 09:31:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	37K
描述
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN

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2SK3819-TL 数据手册

Ordering number : ENN8057

2SK3819

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SK3819

Features

• Low ON-resistance.

•

4V drive.

•

Ultrahigh-speed switching.

•

Motor drive, DC / DC converter.

•

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

100

±20

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

24.5

Avalanche Enargy (Single Pulse) *1

Avalanche Current *2

Note : *1 V =20V, L=200µH, I =14A

*2 L≤200µH, single pulse

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

100

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0V

(BR)DSS

D GS

=100V, V =0V

µA

DSS

GSS

= ±16V, V =0V

±10

V (off)

=10V, I =1mA

1.2

6.5

2.6

Forward Transfer Admittance

yfs

=10V, I =7A

(on)1

=7A, V =10V

100

120

130

160

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=7A, V =4V

D GS

Marking : K3819

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61005QA MS IM TB-00000602 No.8057-1/4

12 3 4

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与2SK3819-TL相关器件

型号	品牌	获取价格	描述	数据表
2SK381-T11-A	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-B	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-D	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK381-T11-E	MITSUBISHI	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC
2SK382	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2A I(D) \| TO-220AB
2SK3820	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3820(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,26A I(D),TO-263ABVAR
2SK3820-DL-1E	ONSEMI	获取价格	N-Channel Power MOSFET, 100V, 26A, 60mΩ, Sing
2SK3820-DL-E	ONSEMI	获取价格	Power MOSFET 100V 26A 60 mOhm Single N-Channel SMD
2SK3820-FD5-E	ONSEMI	获取价格	Power MOSFET 100V 26A 60 mOhm Single N-Channel SMD

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