生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.38 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 14 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3819-TL | ONSEMI |
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Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met | |
2SK381-T11-A | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK381-T11-B | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK381-T11-D | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK381-T11-E | MITSUBISHI |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC | |
2SK382 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-220AB | |
2SK3820 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3820(SMP-FD) | ONSEMI |
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TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,26A I(D),TO-263ABVAR | |
2SK3820-DL-1E | ONSEMI |
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N-Channel Power MOSFET, 100V, 26A, 60mΩ, Sing | |
2SK3820-DL-E | ONSEMI |
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Power MOSFET 100V 26A 60 mOhm Single N-Channel SMD |