生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.3 | Is Samacsys: | N |
雪崩能效等级(Eas): | 60 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 160 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3816(SMP) | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),TO-262VAR | |
2SK3816(SMP-FD) | ONSEMI |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
2SK3816-DL-1E | ONSEMI |
获取价格 |
N-Channel Power MOSFET, 60V, 40A, 26mΩ, Single TO-262-3L/TO-263-2L, D2PAK / TO-2 | |
2SK3817 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3817-DL-E | ONSEMI |
获取价格 |
Power MOSFET 60V 60A, 22mOhm Single N-Channel D2PAK | |
2SK3817-TL | ONSEMI |
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Power Field-Effect Transistor, 60A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met | |
2SK3818 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
2SK3818(SMP) | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,74A I(D),TO-262VAR | |
2SK3818(SMP-FD) | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,74A I(D),TO-263ABVAR | |
2SK3819 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |