Datasheet > 2SK3820-DL-1E

2SK3820-DL-1E

更新时间： 2024-10-15 11:15:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	231K
描述
N-Channel Power MOSFET, 100V, 26A, 60mΩ, Single TO-263-2L

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK3820-DL-1E 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.16
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	26 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	50 W	子类别：	FET General Purpose Powers
表面贴装：	YES	端子面层：	Tin (Sn)
Base Number Matches：	1

2SK3820-DL-1E 数据手册

Ordering number : EN8147A

2SK3820

N-Channel Power MOSFET

http://onsemi.com

100V, 26A, 60m TO-263-2L

Ω,

Features

•

ON-resistance R (on)1=45m (typ.)

Input capacitance Ciss=2150pF (typ.)

4V drive

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

100

Unit

DSS

±20

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

104

≤

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

84.5

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note : 1 V =20V, L=200μH, I =26A (Fig.1)

2 L 200μH, single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Ordering & Package Information

Device

Package

Shipping

memo

7535-001

TO-263-2L

(SC-83, TO-263)

2SK3820-DL-1E

800pcs./reel

Pb Free

2SK3820-DL-1E

Packing Type: DL

Marking

4.5

10.0

8.0

1.3

K3820

5.3

LOT No.

0.254

0.5

1.27

0.8

Electrical Connection

2, 4

2.54

1 : Gate

2 : Drain

3 : Source

4 : Drain

TO-263-2L

Semiconductor Components Industries, LLC, 2013

June, 2013

61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6

12 3 4 5 6

中文翻译

下载PDF

与2SK3820-DL-1E相关器件

型号	品牌	获取价格	描述	数据表
2SK3820-DL-E	ONSEMI	获取价格	Power MOSFET 100V 26A 60 mOhm Single N-Channel SMD
2SK3820-FD5-E	ONSEMI	获取价格	Power MOSFET 100V 26A 60 mOhm Single N-Channel SMD
2SK3821	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3821(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,40A I(D),TO-263ABVAR
2SK3822	SANYO	获取价格	General-Purpose Switching Device Applications
2SK3823	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3824	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3825	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3826	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3827	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device