Datasheet > 2SK3799_06

2SK3799_06

更新时间： 2024-11-25 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	212K
描述
Silicon N-Channel MOS Type Switching Regulator Applications

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2SK3799_06 数据手册

2SK3799

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)

2SK3799

Switching Regulator Applications

Unit: mm

z Low drain-source ON resistance

z High forward transfer admittance

: R

= 1.0 Ω (typ.)

DS (ON)

: |Y | = 6.0 S (typ.)

z Low leakage current : I

= 100μA (max) (V

= 720 V)

DSS

z Enhancement model : V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1. Gate

2. Drain

3. Source

Drain power dissipation

Single pulse avalanche energy

1080

(Note 2)

JEDEC

JEITA

—

Avalanche current

SC-67

2-10U1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Weight: 1.7 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

2.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

62.5

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Note 2:

= 90 V, T = 25°C (initial), L = 30.9 mH, R = 25Ω, I

= 8 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-13

12 3 4 5 6

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