Ordering number : EN8636
2SK3796
SANYO Sem iconductors
DATA S HEET
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
2SK3796
Applicatins
• Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.
Features
• Small I
.
GSS
•
Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
30
--30
10
DSX
Gate-to-Drain Voltage
Gate Current
V
V
GDS
I
G
mA
mA
mW
°C
Drain Current
I
10
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
100
150
D
Tj
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--10µA, V =0V
Unit
min
--30
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
V
nA
V
(BR)GDS
G
DS
I
V
=--20V, V =0V
DS
--1.0
--2.2
GSS
(off)
GS
DS
V
V
=10V, I =1µA
--0.18
--0.95
GS
D
Marking : K
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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32207GB TI IM TC-00000609 No.8636-1/4