生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.25 | 配置: | SINGLE |
最大漏极电流 (ID): | 0.01 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3796_12 | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3796-2 | ONSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3796-2-TL-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3796-3 | ONSEMI |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,1.2MA I(DSS),SOT-416 | |
2SK3796-3-TL-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3796-4 | ONSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK3796-4-TL-E | SANYO |
获取价格 |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications | |
2SK3797 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type | |
2SK3797(Q) | TOSHIBA |
获取价格 |
2SK3797(Q) | |
2SK3797_06 | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type Switching Regulator Applications |