Datasheet > 2SK3373_06

2SK3373_06

更新时间： 2024-11-18 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机驱动
页数	文件大小	规格书
6页	177K
描述
Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications

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2SK3373_06 数据手册

2SK3373

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

2SK3373

Switching Regulator and DC/DC Converter Applications

Unit: mm

Motor Drive Applications

•

Low drain-source ON-resistance: R

= 2.9 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 1.7 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 500 V)

DSS

Enhancement model: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

Pulse (t = 1 ms)

(Note 1)

Drain current

Pulse (t = 100 μs)

JEDEC

JEITA

―

(Note 1)

Drain power dissipation (Tc = 25°C)

TOSHIBA

2-7J1B

Single-pulse avalanche energy

112

(Note 2)

Weight: 0.36 g (typ.)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 48.4 mH, R = 25 Ω, I

= 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-06

12 3 4 5 6

中文翻译

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与2SK3373_06相关器件

型号	品牌	获取价格	描述	数据表
2SK3373_10	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3374	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV)
2SK3374_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3374_10	TOSHIBA	获取价格	Switching Regulator Applications
2SK3376MFV	TOSHIBA	获取价格	Silicon N Channel Junction Type For ECM
2SK3376MFV-A	TOSHIBA	获取价格	暂无描述
2SK3376MFV-B	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Pu
2SK3376TK	TOSHIBA	获取价格	Silicon N Channel Junction Type For ECM
2SK3376TK-A	TOSHIBA	获取价格	TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3376TK-B	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE

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