2SK3376MFV-A

更新时间： 2024-11-20 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管光电二极管
页数	文件大小	规格书
6页	152K
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中文翻译

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数据手册

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2SK3376MFV-A 数据手册

2SK3376MFV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376MFV

For ECM

Unit: mm

•

Application for Ultra-compact ECM

1.2±0.05

0.8±0.05

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Gate-Drain voltage

Symbol

Rating

Unit

-20

GDO

Gate Current

°C

Drain power dissipation (Ta = 25°C)

Junction Temperature

(Note 1)

150

125

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

1.Drain

2.Source

3.Gate

VESM

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

TOSHIBA

2-1L1C

Note 1: Mounted on FR4 board

Weight: 1.5mg (typ.)

0.5mm

0.45mm

0.4mm

IDSS CLASSIFICATION

A-Rank

B-Rank

C-Rank

80 to 200µA

170 to 300µA

270 to 480µA

BK-Rank 150 to 350µA

Marking

Equivalent Circuit

Type Name

IDSS Classification Symbol

A :A-Rank

B :B-Rank , BK-Rank

C :C-Rank

2007-11-01

12 3 4 5 6

中文翻译

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