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2SK3376TV-BK PDF预览

2SK3376TV-BK

更新时间: 2024-02-01 04:30:32
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管晶体管
页数 文件大小 规格书
6页 151K
描述
TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal

2SK3376TV-BK 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEAD FREE, 2-1H1A, VESM2, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.23
外壳连接:GATE配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID):0.00039 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

2SK3376TV-BK 数据手册

 浏览型号2SK3376TV-BK的Datasheet PDF文件第2页浏览型号2SK3376TV-BK的Datasheet PDF文件第3页浏览型号2SK3376TV-BK的Datasheet PDF文件第4页浏览型号2SK3376TV-BK的Datasheet PDF文件第5页浏览型号2SK3376TV-BK的Datasheet PDF文件第6页 
2SK3376TV  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK3376TV  
For ECM  
Unit: mm  
Application for Ultra-compact ECM  
1.2±0.05  
0.8±0.05  
Absolute Maximum Ratings (Ta=25°C)  
1
2
3
Characteristic  
Gate-Drain voltage  
Symbol  
Rating  
Unit  
V
-20  
10  
V
GDO  
Gate Current  
I
mA  
mW  
°C  
G
Drain power dissipation (Ta = 25°C)  
Junction Temperature  
P
100  
D
T
125  
j
Storage temperature range  
T
stg  
55~125  
°C  
1.Drain  
2.Source  
3.Gate  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
VESM2  
JEDEC  
JEITA  
-
-
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-1H1A  
Weight: 0.8mg (typ.)  
IDSS CLASSIFICATION  
A-Rank  
B-Rank  
C-Rank  
80 to 200µA  
170 to 300µA  
270 to 480µA  
BK-Rank 150 to 350µA  
Marking  
Equivalent Circuit  
D
Type Name  
Top Gate  
Lot Code  
3
G
IDSS Classification Symbol  
A :A-Rank  
B :B-Rank , BK-Rank  
C :C-Rank  
S
Precaution  
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use  
it as a terminal.  
1
2007-11-01  

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