Datasheet > 2SK3386

2SK3386

更新时间： 2024-11-21 12:31:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	85K
描述
Low on-resistance RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 17A)

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2SK3386 数据手册

SMD Type

Product specification

2SK3386

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

Features

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-resistance

R^DS(on)1= 21 m MAX. (V^GS= 10 V, I^D= 17A)

R^DS(on)2= 36 m MAX. (V^GS= 4.0 V, I^D= 17A)

Low C^iss: C^iss= 2100 pF TYP.

Built-in gate protection diode

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

100

Power dissipation

T^C=25

T^A=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

Unit

V^DS=60V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

VDS=10V,ID=17A

V^GS=10V,I^D=17A

V^GS=4.0V,I^D=17A

1.5

2.0

2.5

Forward transfer admittance

R^DS(on)1

R^DS(on)2

C^iss

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

2100

340

170

V^DS=10V,VGS=0,f=1MHZ

C^oss

C^rss

t^on

t^r

310

I^D=17A,V^GS(on)=10V,R^G=10 ,V^DD=30V

Turn-off delay time

Fall time

t^off

100

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=34A, V^DD= 48 V, V^GS= 10 V

QGS

Q^GD

7.0

http://www.twtysemi.com

sales@twtysemi.com

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