是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 20 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3378 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3378 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3378ENTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3378ENTR-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK338 | NEC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK3380 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3385 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK3385 | TYSEMI |
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Low on-resistance RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 15 A) | |
2SK3385 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3385(0)-Z-E1 | RENESAS |
获取价格 |
2SK3385(0)-Z-E1 |