Datasheet > 2SK3376MFV-B

2SK3376MFV-B

更新时间： 2024-02-15 01:40:12

品牌	Logo	应用领域
东芝 - TOSHIBA		光电二极管晶体管
页数	文件大小	规格书
6页	152K
描述
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal

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技术参数
数据手册

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2SK3376MFV-B 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.61
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR	最大漏极电流 (ID)：	0.00034 A
FET 技术：	JUNCTION	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

2SK3376MFV-B 数据手册

2SK3376MFV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376MFV

For ECM

Unit: mm

•

Application for Ultra-compact ECM

1.2±0.05

0.8±0.05

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Gate-Drain voltage

Symbol

Rating

Unit

-20

GDO

Gate Current

°C

Drain power dissipation (Ta = 25°C)

Junction Temperature

(Note 1)

150

125

Storage temperature range

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

1.Drain

2.Source

3.Gate

VESM

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

TOSHIBA

2-1L1C

Note 1: Mounted on FR4 board

Weight: 1.5mg (typ.)

0.5mm

0.45mm

0.4mm

IDSS CLASSIFICATION

A-Rank

B-Rank

C-Rank

80 to 200µA

170 to 300µA

270 to 480µA

BK-Rank 150 to 350µA

Marking

Equivalent Circuit

Type Name

IDSS Classification Symbol

A :A-Rank

B :B-Rank , BK-Rank

C :C-Rank

2007-11-01

12 3 4 5 6

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