是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | LEAD FREE, 2-1H1A, VESM2, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.23 |
外壳连接: | GATE | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最大漏极电流 (ID): | 0.00039 A | FET 技术: | JUNCTION |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK3376TK-C | TOSHIBA | 暂无描述 |
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2SK3376TV | TOSHIBA | Silicon N Channel Junction Type For ECM |
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|
2SK3376TV-A | TOSHIBA | 暂无描述 |
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|
2SK3376TV-B | TOSHIBA | 暂无描述 |
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2SK3376TV-BK | TOSHIBA | TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General P |
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2SK3376TV-C | TOSHIBA | 暂无描述 |
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