5秒后页面跳转
2SK3374_10 PDF预览

2SK3374_10

更新时间: 2024-11-18 07:32:31
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
6页 183K
描述
Switching Regulator Applications

2SK3374_10 数据手册

 浏览型号2SK3374_10的Datasheet PDF文件第2页浏览型号2SK3374_10的Datasheet PDF文件第3页浏览型号2SK3374_10的Datasheet PDF文件第4页浏览型号2SK3374_10的Datasheet PDF文件第5页浏览型号2SK3374_10的Datasheet PDF文件第6页 
2SK3374  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3374  
Switching Regulator Applications  
Unit: mm  
Low drain-source ON-resistance: R  
= 3.7 Ω (typ.)  
DS (ON)  
High forward transfer admittance: Y = 0.7 S (typ.)  
fs  
Low leakage current: I  
= 100 µA (max) (V  
= 450 V)  
DSS  
DS  
Enhancement mode: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
450  
450  
±30  
1
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC  
(Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
2
A
DP  
Drain power dissipation (Tc = 25°C)  
P
1.3  
W
D
AS  
AR  
Single pulse avalanche energy  
JEDEC  
JEITA  
E
122  
mJ  
(Note 2)  
Avalanche current  
I
1
0.13  
A
TOSHIBA  
2-8M1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.54 g (typ.)  
T
150  
ch  
Storage temperature range  
T
stg  
55 to150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
96.1  
Unit  
Thermal resistance, channel to ambient  
R
°C/W  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 203 mH, R = 25 Ω, I = 1 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2010-04-13  

与2SK3374_10相关器件

型号 品牌 获取价格 描述 数据表
2SK3376MFV TOSHIBA

获取价格

Silicon N Channel Junction Type For ECM
2SK3376MFV-A TOSHIBA

获取价格

暂无描述
2SK3376MFV-B TOSHIBA

获取价格

TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Pu
2SK3376TK TOSHIBA

获取价格

Silicon N Channel Junction Type For ECM
2SK3376TK-A TOSHIBA

获取价格

TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3376TK-B TOSHIBA

获取价格

TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3376TK-BK TOSHIBA

获取价格

TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3376TK-C TOSHIBA

获取价格

暂无描述
2SK3376TV TOSHIBA

获取价格

Silicon N Channel Junction Type For ECM
2SK3376TV-A TOSHIBA

获取价格

暂无描述