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2SK3358-S PDF预览

2SK3358-S

更新时间: 2024-11-23 22:52:55
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描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3358-S 数据手册

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PRELIMINARY DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3358  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3358  
The 2SK3358 is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3358-S  
FEATURES  
Low on-state resistance  
2SK3358-Z  
TO-220SMD  
DS(on)1  
GS  
D
R
R
= 30 mMAX. (V = 10 V, I = 28 A)  
DS(on)2  
GS  
D
= 40 mMAX. (V = 4.5 V, I = 20 A)  
iss  
iss  
Low C : C = 3200 pF TYP.  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
100  
V
V
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
V
±20  
+20, 10  
±55  
DS  
GSS(DC)  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
Drain Current (DC)  
I
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±165  
100  
A
(TO-262)  
C
T
P
Total Power Dissipation (T = 25°C)  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
T
Channel Temperature  
150  
stg  
Storage Temperature  
T
–55 to +150  
39  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
152  
mJ  
(TO-220SMD)  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
1.25  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2000 NS CP(K)  
Printed in Japan  
D14322EJ1V0DS00 (1st edition)  
The mark shows major revised points.  
1999  
©

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