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2SK3365-AZ

更新时间: 2024-11-20 13:04:27
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日电电子 - NEC 晶体小信号场效应晶体管开关
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2SK3365-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3365  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3365 is N-Channel MOS Field Effect Transistor  
designed for DC/DC converters application of notebook  
computers.  
PART NUMBER  
2SK3365  
PACKAGE  
TO-251  
2SK3365-Z  
TO-252  
FEATURES  
Low on-resistance  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 14 m(MAX.) (V = 10 V, I = 15 A)  
GS  
D
= 21 m(MAX.) (V = 4.5 V, I = 15 A)  
GS  
D
= 29 m(MAX.) (V = 4.0 V, I = 15 A)  
iss  
iss  
Low C : C = 1300 pF (TYP.)  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
DSS  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
V
30  
±20  
±30  
±120  
36  
V
GSS  
V
V
A
D(DC)  
I
Drain Current (Pulse) Note  
D(pulse)  
I
A
C
T
P
Total Power Dissipation (T = 25 °C)  
W
W
°C  
A
T
P
Total Power Dissipation (T = 25 °C)  
1.0  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to + 150 °C  
Note PW 10 µs, Duty cycle 1 %  
THERMAL RESISTANCE  
Channel to case  
th(ch-C)  
R
R
3.48  
125  
°C/W  
°C/W  
th(ch-A)  
Channel to ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published September 1999 NS CP(K)  
Printed in Japan  
D14255EJ1V0DS00 (1st edition)  
1999  
©

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