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2SK3367-Z PDF预览

2SK3367-Z

更新时间: 2024-11-06 22:13:35
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关
页数 文件大小 规格书
8页 85K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3367-Z 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TO-252, MP-3Z, 3 PINReach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):36 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3367-Z 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3367  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook  
computers.  
ORDERING INFORMATION  
PART NUMBER  
FEATURES  
Low on-resistance  
DS(on)1  
PACKAGE  
TO-251  
GS  
D
R
R
R
= 9.0 mMAX. (V = 10 V, I = 18 A)  
2SK3367  
DS(on)2  
DS(on)3  
GS  
D
= 12.0 mMAX. (V = 4.5 V, I = 18 A)  
GS  
D
= 14.0 mMAX. (V = 4.0 V, I = 18 A)  
2SK3367-Z  
TO-252  
iss  
iss  
Low C : C = 2800 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
30  
±20  
±36  
±144  
40  
V
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
D(DC)  
Drain Current (DC)  
Drain Current (Pulse) Note  
I
A
D(pulse)  
I
A
C
T
P
Total Power Dissipation (T = 25 °C)  
W
W
°C  
A
T
P
Total Power Dissipation (T = 25 °C)  
1.0  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to + 150 °C  
Note PW 10 µs, Duty cycle 1 %  
THERMAL RESISTANCE  
Channel to case  
th(ch-C)  
R
3.13  
125  
°C/W  
°C/W  
th(ch-A)  
R
Channel to ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published October 1999 NS CP(K)  
Printed in Japan  
D14257EJ1V0DS00 (1st edition)  
1999  
©

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