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2SK3372G PDF预览

2SK3372G

更新时间: 2024-11-20 13:04:27
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
3页 65K
描述
Small Signal Field-Effect Transistor, 0.00047A I(D), 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN

2SK3372G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82Is Samacsys:N
其他特性:LOW NOISE配置:SINGLE
最大漏极电流 (ID):0.00047 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK3372G 数据手册

 浏览型号2SK3372G的Datasheet PDF文件第2页浏览型号2SK3372G的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK3372  
Silicon N-Channel Junction  
Unit: mm  
+0.05  
–0.02  
+0.05  
0.33  
0.10  
–0.02  
For impedance conversion in low frequency  
For electret capacitor microphone  
3
I Features  
+0.05  
1
2
0.23  
–0.02  
High mutual conductance gm  
Low noise voltage of NV  
(0.40)(0.40)  
0.80 0.05  
1.20 0.05  
5˚  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Drain-source voltage  
Drain-gate voltage  
Symbol  
VDSO  
VDGO  
IDSO  
IDGO  
IGSO  
PD  
Rating  
Unit  
V
20  
1: Drain  
2: Source  
3: Gate  
20  
V
Drain-source current  
Drain-gate current  
2
mA  
mA  
mA  
mW  
°C  
SSSMini3-F1 Package  
2
2
Gate-source current  
Marking Symbol: 1H  
Allowable power dissipation  
Operating ambient temperature  
Storage temperature  
100  
Topr  
20 to +80  
55 to +125  
Tstg  
°C  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Drain current  
Symbol  
Conditions  
Min  
100  
107  
660  
Typ  
Max  
460  
470  
Unit  
1
*
ID  
VDS = 2.0 V, RD = 2.2 k1%  
VDS = 2.0 V, RD = 2.2 k1%, VGS = 0  
VD = 2.0 V, VGS = 0, f = 1 kHz  
µA  
IDSS  
gm  
Mutual conductance  
Noise voltage  
1600  
µS  
NV  
VD = 2.0 V, RD = 2.2 k1%  
CO = 5 pF, A-Curve  
4
mV  
Voltage gain  
GV1  
GV2  
VD = 2.0 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
7.5  
4.0  
8.0  
4.7  
1.5  
5.0  
0
dB  
VD = 12 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
GV3  
VD = 1.5 V, RD = 2.2 k1%  
CO = 5 pF, eG = 10 mV, f = 1 kHz  
∆GV. f*2  
VD = 2.0 V, RD = 2.2 k1%  
1.7  
CO = 5 pF, eG = 10 mV, f =1 kHz to 70 Hz  
Voltage gain difference  
Electrostatic discharge *  
GV2 GV1  
GV1 GV3  
ESD  
0
4.0  
1.7  
dB  
V
0
3
C = 200 pF, R = 0 Ω  
200  
Note) 1: ID is assured for IDSS  
.
*
2: ∆G . fis assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)  
3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701  
Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.  
*
*
V
Publication date: April 2002  
SJF00032AED  
1

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