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2SK3367-Z PDF预览

2SK3367-Z

更新时间: 2024-11-18 20:32:23
品牌 Logo 应用领域
瑞萨 - RENESAS 开关晶体管
页数 文件大小 规格书
9页 230K
描述
36000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA, TO-252, MP-3Z, 3 PIN

2SK3367-Z 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):36 A最大漏极电流 (ID):36 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3367-Z 数据手册

 浏览型号2SK3367-Z的Datasheet PDF文件第2页浏览型号2SK3367-Z的Datasheet PDF文件第3页浏览型号2SK3367-Z的Datasheet PDF文件第4页浏览型号2SK3367-Z的Datasheet PDF文件第5页浏览型号2SK3367-Z的Datasheet PDF文件第6页浏览型号2SK3367-Z的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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