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2SK3365-Z-AZ PDF预览

2SK3365-Z-AZ

更新时间: 2024-11-20 13:04:27
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关
页数 文件大小 规格书
8页 65K
描述
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN

2SK3365-Z-AZ 技术参数

生命周期:Transferred零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.029 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3365-Z-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3365  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3365 is N-Channel MOS Field Effect Transistor  
designed for DC/DC converters application of notebook  
computers.  
PART NUMBER  
2SK3365  
PACKAGE  
TO-251  
2SK3365-Z  
TO-252  
FEATURES  
Low on-resistance  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 14 m(MAX.) (V = 10 V, I = 15 A)  
GS  
D
= 21 m(MAX.) (V = 4.5 V, I = 15 A)  
GS  
D
= 29 m(MAX.) (V = 4.0 V, I = 15 A)  
iss  
iss  
Low C : C = 1300 pF (TYP.)  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
DSS  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
V
30  
±20  
±30  
±120  
36  
V
GSS  
V
V
A
D(DC)  
I
Drain Current (Pulse) Note  
D(pulse)  
I
A
C
T
P
Total Power Dissipation (T = 25 °C)  
W
W
°C  
A
T
P
Total Power Dissipation (T = 25 °C)  
1.0  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to + 150 °C  
Note PW 10 µs, Duty cycle 1 %  
THERMAL RESISTANCE  
Channel to case  
th(ch-C)  
R
R
3.48  
125  
°C/W  
°C/W  
th(ch-A)  
Channel to ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published September 1999 NS CP(K)  
Printed in Japan  
D14255EJ1V0DS00 (1st edition)  
1999  
©

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