生命周期: | Transferred | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.17 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.029 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3365-Z-E1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,30A I(D),TO-252AA | |
2SK3365-Z-E2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,30A I(D),TO-252AA | |
2SK3366 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3366 | KEXIN |
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MOS Field Effect Transistor | |
2SK3366 | TYSEMI |
获取价格 |
Super low on-state resistance: RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 10 A) | |
2SK3366-Z | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3366-Z-AZ | NEC |
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Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
2SK3367 | TYSEMI |
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Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A) | |
2SK3367 | RENESAS |
获取价格 |
36000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN | |
2SK3367 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |