Datasheet > 2SK3365

2SK3365

更新时间： 2024-11-20 12:53:23

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关
页数	文件大小	规格书
1页	150K
描述
Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)

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中文翻译

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数据手册

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2SK3365 数据手册

ype

TraMnOsiSstFIIoCCErsT

Product specification

2SK3365

TO-252

Features

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

Super low on-state resistance:

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

R^DS(on)1= 14 m MAX. (V^GS= 10 V, I^D= 15 A)

R^DS(on)2= 21m MAX. (V^GS= 4.5 V, I^D= 15A)

R^DS(on)3= 29m MAX. (V^GS= 4 V, I^D= 15A)

Low C^iss: C^iss= 1300 pF TYP.

0.127

max

+0.1

0.80

-0.1

Built-in gate protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

120

Drain current

I^dp*

1.0

Power dissipation

T^A=25

T^C=25

P^D

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

V^DS=30V,V^GS=0

Min

Typ

Max

Unit

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=15A

V^GS=10V,I^D=15A

V^GS=4.5V,I^D=15A

V^GS=4.0V,I^D=15A

1.5

8.0

2.0

16.0

11.5

15.2

2.5

Forward transfer admittance

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

1300

405

190

V^DS=10V,V^GS=0,f=1MHZ

t^r

500

I^D=15A,V^GS(on)=10V,R^G=10 ,V^DD=15V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

Q^GS

Q^GD

V^DD= 24V, V^GS= 10 V, I^D= 30A

4.5

7.0

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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