2SK3358-Z

更新时间： 2024-02-07 10:19:44

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
4页	50K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

获取价格

技术参数
数据手册

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2SK3358-Z 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	55 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

2SK3358-Z 数据手册

PRELIMINARY DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3358

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

2SK3358

The 2SK3358 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK3358-S

FEATURES

• Low on-state resistance

2SK3358-Z

TO-220SMD

DS(on)1

= 30 mΩ MAX. (V = 10 V, I = 28 A)

DS(on)2

= 40 mΩ MAX. (V = 4.5 V, I = 20 A)

★

iss

• Low C : C = 3200 pF TYP.

• Built-in gate protection diode

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

DSS

Drain to Source Voltage (V = 0 V)

100

GSS(AC)

Gate to Source Voltage (V = 0 V)

±20

+20, −10

±55

GSS(DC)

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

Drain Current (Pulse) ^Note1

D(pulse)

±165

100

★

(TO-262)

Total Power Dissipation (T = 25°C)

°C

Total Power Dissipation (T = 25°C)

1.5

Channel Temperature

150

stg

Storage Temperature

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

152

(TO-220SMD)

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

THERMAL RESISTANCE

th(ch-C)

Channel to Case

1.25

83.3

°C/W

th(ch-A)

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 2000 NS CP(K)

Printed in Japan

D14322EJ1V0DS00 (1st edition)

★

The mark shows major revised points.

1999

12 3 4

中文翻译

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