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2SK3295 PDF预览

2SK3295

更新时间: 2024-11-16 06:23:15
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
2页 43K
描述
MOS Field Effect Transistor

2SK3295 数据手册

 浏览型号2SK3295的Datasheet PDF文件第2页 
SMD Type  
Transistors  
MOS Field Effect Transistor  
2SK3295  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
4.5 V drive available  
+0.1  
1.27  
-0.1  
Low on-state resistance  
RDS(on)1 = 18 mÙ MAX. (VGS = 10 V, ID = 18 A)  
Low gate charge  
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)  
Built-in gate protection diode  
+0.1  
1.27  
-0.1  
0.1max  
+0.1  
0.81  
-0.1  
Surface mount device available  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current(DC)  
Symbol  
VDSS  
Rating  
20  
Unit  
V
VGSS  
V
20  
ID(DS)  
A
35  
Drain Current(pulse) *  
ID(pulse)  
140  
1.5  
35  
A
Total Power Dissipation (TA = 25  
Total Power Dissipation (TC = 25  
Channel Temperature  
)
)
PT  
W
Tch  
150  
Storage temperature  
Tstg  
-55 to +150  
* PW 10ìs,Dduty cycle 1%.  
1
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