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2SK3296-AZ

更新时间: 2024-09-15 13:01:07
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2SK3296-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3296  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3296 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
2SK3296  
PACKAGE  
TO-220AB  
2SK3296-S  
2SK3296-ZK  
2SK3296-ZJ  
TO-262  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
DS(on)1  
R
GS  
D
= 12 mMAX. (V = 10 V, I = 18 A)  
Low gate charge  
G
D
DD  
GS  
Q = 30 nC TYP. (I = 35 A, V = 16 V, V = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
20  
20  
V
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
C
D(DC)  
D(pulse)  
T1  
Drain Current (DC) (T = 25°C)  
I
I
35  
140  
A
A
Drain Current (Pulse) Note  
A
Total Power Dissipation (T = 25°C)  
P
P
1.5  
W
W
°C  
°C  
C
T2  
Total Power Dissipation (T = 25°C)  
40  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D14063EJ2V0DS00 (2nd edition)  
The mark  shows major revised points.  
1999, 2000  
©

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