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2SK3296-ZK PDF预览

2SK3296-ZK

更新时间: 2024-11-17 22:21:43
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 423K
描述
MOS FIELD EFFECT TRANSISTOR

2SK3296-ZK 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.91Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):35 A
最大漏源导通电阻:0.019 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3296-ZK 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3296  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
The 2SK3296 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
PART NUMBER  
2SK3296  
PACKAGE  
TO-220AB  
2SK3296-S  
2SK3296-ZK  
2SK3296-ZJ  
TO-262  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
DS(on)1  
R
GS  
D
= 12 mMAX. (V = 10 V, I = 18 A)  
Low gate charge  
G
D
DD  
GS  
Q = 30 nC TYP. (I = 35 A, V = 16 V, V = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
20  
20  
V
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
C
D(DC)  
D(pulse)  
T1  
Drain Current (DC) (T = 25°C)  
I
I
35  
140  
A
A
Drain Current (Pulse) Note  
A
Total Power Dissipation (T = 25°C)  
P
P
1.5  
W
W
°C  
°C  
C
T2  
Total Power Dissipation (T = 25°C)  
40  
ch  
T
Channel Temperature  
Storage Temperature  
150  
stg  
T
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2001 NS CP(K)  
Printed in Japan  
D14063EJ2V0DS00 (2nd edition)  
The mark  shows major revised points.  
1999, 2000  
©

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