Datasheet > 2SK3301(TE16L1,Q)

2SK3301(TE16L1,Q)

更新时间： 2024-09-16 14:49:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	197K
描述
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,1A I(D),TO-252

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2SK3301(TE16L1,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.21	配置：	Single
最大漏极电流 (Abs) (ID)：	1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK3301(TE16L1,Q) 数据手册

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2SK3301

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)

2SK3301

Switching Regulatorand DC-DC Converter Applications

Unit: mm

•

Low drain-source on-resistance: R

= 15 Ω (typ.)

DS(ON)

High forward transfer admittance: |Y | = 0.65 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 720 V)

DSS

Enhancement mode: V = 2.4 to 3.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

900

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse

(Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

140

(Note 2)

TOSHIBA

2-7J1B

Avalanche current

2.0

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 257 mH, R = 25 Ω, I = 1 A

Note 3: Repetitive rating: pulse width limited by max junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2011-12-13

12 3 4 5 6

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