2SK3299-S

更新时间： 2024-11-04 22:36:11

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	80K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

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数据手册

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2SK3299-S 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3299

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION

The 2SK3299 is N-Channel MOS FET device that features

a low gate charge and excellent switching characteristics,

designed for high voltage applications such as switching power

supply, AC adapter.

PART NUMBER

2SK3299

PACKAGE

TO-220AB

TO-262

2SK3299-S

2SK3299-ZJ

TO-263

FEATURES

•Low gate charge

Q^G= 34 nC TYP. (V^DD= 450 V, V^GS= 10 V, I^D= 10 A)

•Gate voltage rating ±30 V

•Low on-state resistance

R^DS(on)= 0.75 Ω MAX. (V^GS= 10 V, I^D= 5.0 A)

•Avalanche capability ratings

•Surface mount package available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

V^DSS

V^GSS

600

±30

Drain Current (DC) (T^C= 25°C)

Drain Current (Pulse) ^Note1

I^D(DC)

I^D(pulse)

P^T1

±10

±40

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Channel Temperature

1.5

°C

P^T2

T^ch

150

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note2

I^AS

Single Avalanche Energy ^Note2

E^AS

66.7

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 150 V, R^G= 25 Ω, V^GS= 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 2000 NS CP(K)

D14060EJ1V0DS00 (1st edition)

•

1999,2000

The mark shows major revised points.

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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