Datasheet > 2SK3299

2SK3299

更新时间： 2024-11-06 06:23:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	44K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3299 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3299

TO-263

Unit: mm

+0.2

4.57

-0.2

Features

+0.1

1.27

-0.1

Low gate charge

Q^G= 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)

Gate voltage rating 30 V

+0.1

-0.1

0.1max

1.27

Low on-state resistance

R^DS(on)= 0.75

MAX. (VGS = 10 V, ID = 5.0 A)

+0.1

0.81

-0.1

2.54

Avalanche capability ratings

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Surface mount package available

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

600

Gate to source voltage

Drain current

I^dp*

1.5

Power dissipation

TA=25

T^C=25

P^D

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

Testconditons

VDS=600V,VGS=0

Min

Typ

Max

100

3.5

Unit

I^DSS

I^GSS

V^GS(off)

Yfs

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=5.0A

VGS=10V,ID=5.0A

2.5

3.2

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

R^DS(on)

Ciss

C^oss

C^rss

t^on

0.68 0.75

1580

280

VDS=10V,VGS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=5.0A,VGS(on)=10V,RG=10

,VDD=150V

Turn-off delay time

Fall time

t^off

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