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2SK3295-ZJ PDF预览

2SK3295-ZJ

更新时间: 2024-11-15 22:19:15
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 73K
描述
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

2SK3295-ZJ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3295  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3295  
PACKAGE  
TO-220AB  
The 2SK3295 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
2SK3295-S  
2SK3295-ZK  
2SK3295-ZJ  
TO-262  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
RDS(on)1 = 18 mMAX. (VGS = 10 V, ID = 18 A)  
Low gate charge  
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
±20  
V
V
±35  
A
±140  
1.5  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
°C  
PT2  
35  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14064EJ2V0DS00 (2nd edition)  
Date Published April 2001 NS CP(K)  
The mark ! shows major revised points.  
1999, 2000  
©
Printed in Japan  

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