5秒后页面跳转
2SK3295-S PDF预览

2SK3295-S

更新时间: 2024-09-27 22:36:11
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 73K
描述
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

2SK3295-S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.92Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):35 A
最大漏源导通电阻:0.027 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3295-S 数据手册

 浏览型号2SK3295-S的Datasheet PDF文件第2页浏览型号2SK3295-S的Datasheet PDF文件第3页浏览型号2SK3295-S的Datasheet PDF文件第4页浏览型号2SK3295-S的Datasheet PDF文件第5页浏览型号2SK3295-S的Datasheet PDF文件第6页浏览型号2SK3295-S的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3295  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3295  
PACKAGE  
TO-220AB  
The 2SK3295 is N-Channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
2SK3295-S  
2SK3295-ZK  
2SK3295-ZJ  
TO-262  
TO-263(MP-25ZK)  
TO-263(MP-25ZJ)  
FEATURES  
4.5 V drive available  
Low on-state resistance  
RDS(on)1 = 18 mMAX. (VGS = 10 V, ID = 18 A)  
Low gate charge  
QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
20  
±20  
V
V
±35  
A
±140  
1.5  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
°C  
PT2  
35  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
Note PW 10 µs, Duty Cycle 1%  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14064EJ2V0DS00 (2nd edition)  
Date Published April 2001 NS CP(K)  
The mark ! shows major revised points.  
1999, 2000  
©
Printed in Japan  

与2SK3295-S相关器件

型号 品牌 获取价格 描述 数据表
2SK3295-ZJ NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3295-ZK NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
2SK3295-ZK RENESAS

获取价格

35A, 20V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, 3 PIN
2SK3295-ZK-E1-AY RENESAS

获取价格

2SK3295-ZK-E1-AY
2SK3296 KEXIN

获取价格

MOS Field Effect Transistor
2SK3296 TYSEMI

获取价格

4.5 V drive available Low on-state resistance RDS(on)1 = 12m MAX. (VGS= 10 V, ID = 18 A)
2SK3296 RENESAS

获取价格

35A, 20V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
2SK3296 NEC

获取价格

MOS FIELD EFFECT TRANSISTOR
2SK3296-AZ NEC

获取价格

暂无描述
2SK3296-S NEC

获取价格

MOS FIELD EFFECT TRANSISTOR