生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.031 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3280TP-FA | SANYO |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252VAR | |
2SK3283 | SANYO |
获取价格 |
N-Channel Silicon MOSFET | |
2SK3283TP-FA | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),TO-252VAR | |
2SK3284 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
2SK3285 | SANYO |
获取价格 |
DC/DC Converter Applications | |
2SK3285SMP | SANYO |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-262VAR | |
2SK3285SMP-FA | SANYO |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB | |
2SK3287 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3287 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3288 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Switching |