Datasheet > 2SK3283TP-FA

2SK3283TP-FA

更新时间： 2024-11-18 14:50:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	26K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),TO-252VAR

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中文翻译

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技术参数
数据手册

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2SK3283TP-FA 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	15 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	20 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

2SK3283TP-FA 数据手册

Ordering number : ENN6600

2SK3283

N-Channel Silicon MOSFET

2SK3283

Load S/W Applications

Preliminary

Features

Package Dimensions

unit : mm

•

Low ON resistance.

• 4V-drive.

2083B

[2SK3283]

6.5

5.0

2.3

0.5

0.85

0.7

1.2

0.6

0.5

1 : Gate

2 : Drain

3 : Source

4 : Drain

2.3

SANYO : TP

unit : mm

2092B

[2SK3283]

6.5

2.3

5.0

0.5

0.85

0.6

1 : Gate

1.2

0 to 0.2

2 : Drain

3 : Source

4 : Drain

2.3

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

HD 010705-1/3

12 3

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