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2SK3285SMP PDF预览

2SK3285SMP

更新时间: 2024-11-17 23:20:39
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管
页数 文件大小 规格书
5页 50K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-262VAR

2SK3285SMP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):40 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

2SK3285SMP 数据手册

 浏览型号2SK3285SMP的Datasheet PDF文件第2页浏览型号2SK3285SMP的Datasheet PDF文件第3页浏览型号2SK3285SMP的Datasheet PDF文件第4页浏览型号2SK3285SMP的Datasheet PDF文件第5页 
Ordering number:ENN6358  
N-Channel Silicon MOSFET  
2SK3285  
DC/DC Converter Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· 4V drive.  
2093A  
[2SK3285]  
4.5  
10.2  
1.3  
1.2  
0.8  
0.4  
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
SANYO : SMP  
2.55  
2.55  
unit:mm  
2169  
[2SK3285]  
4.5  
10.2  
1.3  
1
2
3
1.2  
2.55  
0.8  
2.55  
0.4  
1 : Gate  
2 : Drain  
3 : Source  
SANYO : SMP-FA  
2.55  
2.55  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
30300TS (KOTO) TA-2280 No.6358–1/5  

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