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2SK3294-S PDF预览

2SK3294-S

更新时间: 2024-09-27 22:36:11
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 81K
描述
SWITCHING N-CHANNEL POWER MOSFET

2SK3294-S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84雪崩能效等级(Eas):150 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.16 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3294-S 数据手册

 浏览型号2SK3294-S的Datasheet PDF文件第2页浏览型号2SK3294-S的Datasheet PDF文件第3页浏览型号2SK3294-S的Datasheet PDF文件第4页浏览型号2SK3294-S的Datasheet PDF文件第5页浏览型号2SK3294-S的Datasheet PDF文件第6页浏览型号2SK3294-S的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3294  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3294 is N-channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
and designed for high voltage applications such as DC/DC  
converter, actuator driver.  
PART NUMBER  
2SK3294  
PACKAGE  
TO-220AB  
2SK3294-S  
2SK3294-ZJ  
TO-262  
TO-263(MP-25ZJ)  
FEATURES  
Gate voltage rating ±30 V  
Low on-state resistance  
(TO-220AB)  
R
DS(on) = 160 mMAX. (VGS = 10 V, I  
Low input capacitance  
iss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)  
D
= 10 A)  
C
Avalanche capability rated  
Built-in gate protection diode  
Surface mount device available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
(TO-262)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
V
DSS  
250  
±30  
V
V
VGSS  
Drain Current (DC) (T  
C
= 25°C)  
I
I
D(DC)  
±20  
A
Drain Current (Pulse) Note1  
Total Power Dissipation (T  
Total Power Dissipation (T  
Channel Temperature  
D(pulse)  
±60  
A
C
A
= 25°C)  
= 25°C)  
P
T1  
T2  
100  
W
W
°C  
°C  
A
P
1.5  
T
ch  
150  
(TO-263)  
Storage Temperature  
T
stg  
55 to +150  
20  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
I
AS  
AS  
E
150  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 150 V, R = 25 , VGS = 20 V0 V  
G
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14061EJ1V0DS00 (1st edition)  
Date Published August 2001 NS CP (K)  
1999,2001  
©
Printed in Japan  

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