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2SK3288 PDF预览

2SK3288

更新时间: 2024-11-17 22:52:55
品牌 Logo 应用领域
日立 - HITACHI 开关
页数 文件大小 规格书
8页 42K
描述
Silicon N Channel MOS FET High Speed Switching

2SK3288 数据手册

 浏览型号2SK3288的Datasheet PDF文件第2页浏览型号2SK3288的Datasheet PDF文件第3页浏览型号2SK3288的Datasheet PDF文件第4页浏览型号2SK3288的Datasheet PDF文件第5页浏览型号2SK3288的Datasheet PDF文件第6页浏览型号2SK3288的Datasheet PDF文件第7页 
2SK3288  
Silicon N Channel MOS FET  
High Speed Switching  
ADE-208-803 (Z)  
1st.Edition.  
June 1999  
Features  
Low on-resistance  
RDS = 2.7 typ. (VGS = 10 V , ID = 50 mA)  
RDS = 4.7 typ. (VGS = 4 V , ID = 20 mA)  
4 V gate drive device.  
Small package (MPAK)  
Outline  
MPAK  
3
1
D
2
G
1. Source  
2. Gate  
3. Drain  
S

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Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 1