生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 0.3 A | 最大漏源导通电阻: | 3.44 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3290 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3290 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Switching | |
2SK3291 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
2SK3292 | SANYO |
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Ultrahigh-Speed Switching Applications | |
2SK3293 | SANYO |
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Ultrahigh-Speed Switching Applications | |
2SK3294 | KEXIN |
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MOS Field Effect Transistor | |
2SK3294 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3294 | TYSEMI |
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Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 1 | |
2SK3294 | RENESAS |
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暂无描述 | |
2SK3294-S | NEC |
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SWITCHING N-CHANNEL POWER MOSFET |